BSS63 ? pnp general-purpose amplifier ? 1997 fairchild semiconductor corporation www.fairchildsemi.com BSS63 rev. 1.1.0 1 march 2014 BSS63 pnp general-purpose amplifier ordering information absolute maximum ratings (1),(2) stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. notes: 1. these ratings are based on a maximum junction temperature of 150 c. 2. these are steady-state limits. fairchild semiconductor sh ould be consulted on applications involving pulsed or low-duty-cycle operations. part number marking package packing method BSS63 t3 sot-23 3l tape and reel symbol parameter value unit v ceo collector-emitter voltage -100 v v cbo collector-base voltage -110 v v ebo emitter-base voltage -6 v i c collector current - continuous -200 ma t j , t stg junction and storage temperature range -55 to +150 c sot-23 mark: t3 c b e description this device is designed for general-purpose amplifier and switch applications requiring high voltages. sourced from process 74.
BSS63 ? pnp general-purpose amplifier ? 1997 fairchild semiconductor corporation www.fairchildsemi.com BSS63 rev. 1.1.0 2 thermal characteristics (3) values are at t a = 25c unless otherwise noted. note: 3. device mounted on fr-4 pcb 40 mm x 40 mm x 1.5 mm. electrical characteristics values are at t a = 25c unless otherwise noted. symbol parameter max. unit p d total device dissipation 350 mw derate above t a = 25c 2.8 mw/c r ja thermal resistance, junction to ambient 357 c/w symbol parameter conditions min. max. unit v (br)ceo collector-emitter breakdown voltage i c = -100 a, i b = 0 -100 v v (br)cbo collector-base breakdown voltage i c = -10 a, i e = 0 -110 v v (br)ebo emitter-base breakdown voltage i e = -1.0 a, i c = 0 -6.0 v i cbo collector cut-off current v cb = -90 v, i e = 0 -100 na v cb = -90 v, i e = 0, t a = 150c -50 a i ebo emitter cut-off current v eb = -6.0 v, i c = 0 -200 na h fe dc current gain i c = -10 ma, v ce = -1.0 v 30 i c = -25 ma, v ce = -1.0 v 30 v ce (sat) collector-emitter saturation voltage i c = -25 ma, i b = -2.5 ma -0.25 v v be (sat) base-emitter saturation voltage i c = -25 ma, i b = -2.5 ma -0.9 v f t current gain - bandwidth product i c = 25 ma, v ce = -5.0 v, f = 35 mhz 50 mhz
BSS63 ? pnp general-purpose amplifier ? 1997 fairchild semiconductor corporation www.fairchildsemi.com BSS63 rev. 1.1.0 3 typical performan ce characteristics figure 1. typical pulsed current gain vs. collector current figure 2. collec tor-emitter satura tion voltage vs. collector current figure 3. base-emitter saturation voltage vs. collector current figure 4. base-emitter on voltage vs. collector current figure 5. collector cut-off current vs. ambient temperature figure 6. collector-emitter breakdown voltage with resistance between emitter-base 0.0001 0.001 0.01 0.1 1 0 50 100 150 200 i - co l l ec to r cu rr ent (a) h - typical pulsed curre nt gain fe - 40 c 25 c c v = 5v ce 125 c 0.1 1 10 100 0 0.1 0.2 0.3 0.4 i - collector current (ma) v - collector-emitter voltage (v) cesat c = 1 0 125 c - 40 c 25 c 0.1 1 10 100 0.2 0.4 0.6 0.8 1 i - collector current ( ma) v - base-emitter voltag e (v) besat c = 10 125 c - 40 c 25 c 0.1 1 10 100 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - b a se-e mi tter on volta ge (v) be(o n) 125 c - 40 c 25 c c v = 5v ce 25 50 75 100 125 150 0.1 1 10 10 0 t - am bi en t te mpe rat u r e ( c ) i - collector current (na) a v = 10 0v cb cbo 0.1 1 10 100 1000 170 180 190 200 210 220 resistance (k ) bv - breakdown voltage (v) cer
BSS63 ? pnp general-purpose amplifier ? 1997 fairchild semiconductor corporation www.fairchildsemi.com BSS63 rev. 1.1.0 4 typical performan ce characteristics (continued) f i g u r e 7 . i n p u t a n d o u t p u t c a pa c i ta n c e v s . reverse voltage f i g u r e 8 . p o w e r d i s s i p a t i o n v s . ambient temperature 0.1 1 10 100 0 20 40 60 80 v - reverse bias voltage(v) capacitance (pf) c f = 1.0 mhz r c cb eb 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 temperature ( c) p - power dissipation (mw) d o sot-23
BSS63 ? pnp general-purpose amplifier ? 1997 fairchild semiconductor corporation www.fairchildsemi.com BSS63 rev. 1.1.0 5 physical dimensions figure 9. 3-lead, sot23, jedec to-236, low profile (active) package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semi conductor representative to ver ify or obtain the most recent revision. package specifications do not ex pand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconduct or?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ma/ma03d.pdf . for current tape and reel specifications, visit fair child semiconductor?s online packaging area: http://www.fairchildsemi.com/packing_dwg/pkg-ma03d.pdf . land pattern recommendation notes: unless otherwise specified a) reference jedec registration to-236, variation ab, issue h. b) all dimensions are in millimeters. c) dimensions are inclusive of burrs, mold flash and tie bar extrusions. d) dimensioning and tolerancing per asme y14.5m - 1994. e) drawing file name: ma03drev10 3 12 see detail a seating plane scale: 2x gage plane (0.55) (0.93) 1.20 max c 0.10 0.00 0.10 c 2.400.30 2.920.20 1.30 +0.20 -0.15 0.60 0.37 0.20 a b 1.90 0.95 (0.29) 0.95 1.40 2.20 1.00 1.90 0.25 0.23 0.08 0.20 min sot-23
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